Optical Nonlinearity in Cu2CdSnS4 and α/β-Cu2ZnSiS4: Diamond-like Semiconductors with High Laser-Damage Thresholds
Cu2CdSnS4 and α/β-Cu2ZnSiS4 meet several criteria for promising nonlinear optical materials for use in the infrared (IR) region. Both are air-stable, crystallize in noncentrosymmetric space groups, and possess high thermal stabilities. Cu2CdSnS4 and α/β-Cu2ZnSiS4 display wide ranges of optical transparency, 1.4–25 and 0.7–25 μm, respectively, and have relatively large second-order nonlinearity as well as phase matchability for wide regions in the IR. The laser-damage threshold (LDT) for Cu2CdSnS4 is 0.2 GW/cm2, whereas α/β-Cu2ZnSiS4 has a LDT of 2.0 GW/cm2 for picosecond near-IR excitation. Both compounds also exhibit efficient third-order nonlinearity. Electronic structure calculations provide insight into the variation in properties.
Rosmus, K. A., Brant, J. A., Wisneski, S. D., Clark, D. J., Kim, Y. S., Jang, J. I., Brunetta, C. D., Zhang, J., Srnec, M. N., & Aitken, J. A. (2014). Optical Nonlinearity in Cu2CdSnS4 and α/β-Cu2ZnSiS4: Diamond-like Semiconductors with High Laser-Damage Thresholds. Inorganic Chemistry, 53, (15), 7809 - 7811. https://doi.org/10.1021/ic501310d. Retrieved from https://nsuworks.nova.edu/cnso_chemphys_facarticles/167