Optical Nonlinearity in Cu2CdSnS4 and α/β-Cu2ZnSiS4: Diamond-like Semiconductors with High Laser-Damage Thresholds

Authors

Kimberly A. Rosmus, Duquesne University
Jacilynn A. Brant, Duquesne UniversityFollow
Stephen D. Wisneski, Duquesne University
Daniel J. Clark, Binghamton University--SUNY
Yong Soo Kim, Binghamton University;University of Ulsan
Joon I. Jang, Binghamton University
Carl D. Brunetta, Duquesne University
Jian-Han Zhang, Duquesne University
Matthew N. Srnec, Duquesne University
Jennifer A. Aitken, Duquesne University

ORCID

0000-0001-7825-8667

Document Type

Article

Publication Title

Inorganic Chemistry

ISSN

0020-1669

Publication Date

2014

Abstract

Cu₂CdSnS₄ and α/β-Cu₂ZnSiS₄ meet several criteria for promising nonlinear optical materials for use in the infrared (IR) region. Both are air-stable, crystallize in noncentrosymmetric space groups, and possess high thermal stabilities. Cu₂CdSnS₄ and α/β-Cu₂ZnSiS₄ display wide ranges of optical transparency, 1.4–25 and 0.7–25 μm, respectively, and have relatively large second-order nonlinearity as well as phase matchability for wide regions in the IR. The laser-damage threshold (LDT) for Cu₂CdSnS₄ is 0.2 GW/cm², whereas α/β-Cu₂ZnSiS₄ has a LDT of 2.0 GW/cm² for picosecond near-IR excitation. Both compounds also exhibit efficient third-order nonlinearity. Electronic structure calculations provide insight into the variation in properties.

DOI

10.1021/ic501310d

Volume

53

Issue

15

First Page

7809

Last Page

7811

NSUWorks Citation

Rosmus, K. A., Brant, J. A., Wisneski, S. D., Clark, D. J., Kim, Y. S., Jang, J. I., Brunetta, C. D., Zhang, J., Srnec, M. N., & Aitken, J. A. (2014). Optical Nonlinearity in Cu2CdSnS4 and α/β-Cu2ZnSiS4: Diamond-like Semiconductors with High Laser-Damage Thresholds. Inorganic Chemistry, 53, (15), 7809 - 7811. https://doi.org/10.1021/ic501310d. Retrieved from https://nsuworks.nova.edu/cnso_chemphys_facarticles/167