Disorder Characterization of Oxide/Silicon Interfaces from I-V Curves
In this paper, we present results on transmission-energy curves through quantum wells with disordered interfaces. We propose a rule to process experimental data to obtain information about the degree of disorder.
Nemzer, L. R., & Zypman, F. R. (2003). Disorder Characterization of Oxide/Silicon Interfaces from I-V Curves. MRS Proceedings, 786. https://doi.org/10.1557/PROC-786-E3.1. Retrieved from https://nsuworks.nova.edu/cnso_chemphys_facarticles/85