Transport Through Disordered Silicon Oxide Quantum Structures
APS March Meeting 2004 / Montreal, Quebec, Canada
Silicon and oxygen semiconductor-atom structures (SAS) are built by alternating layers, creating structures similar to the traditional superlattices. These SAS have good electro-and photo-luminescence and may therefore form the basis of all-Si optoelectronic devices. Their I-V curves are only qualitatively understood. TEM images show that SAS have stacking faults and dislocations in substantial quantities as to affect response time and transmission. Experimental work has been done to understand why silicon may grow epitaxially after the oxygen barrier. This is never the case in Si/SiO2. If, during growth, the oxygen valve is left open, a large number of defects is generated in bulk silicon. By controlling the oxygen rate, it is possible to produce silicon on both sides of the oxygen interface with defect densities below 109/cm2. Nevertheless, the oxygen layer itself is typically broken up in islands. What is clear is that it is technically possible to produce SAS with negligible bulk defects but that still present strain and disorder at the oxygen interface. We have studied the effect of interface disorder and strain on SAS current-voltage curves. Their quality factor is extremely sensitive to the presence of imperfections. We will show the dependence of the spectrum on disorder. Work supported by Research Corporation.
Nemzer, Louis R. and Zypman, Fredy R., "Transport Through Disordered Silicon Oxide Quantum Structures" (2004). Chemistry and Physics Faculty Proceedings, Presentations, Speeches, Lectures. 5.
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