Optical Nonlinearity in Cu2CdSnS4 and α/β-Cu2ZnSiS4: Diamond-like Semiconductors with High Laser-Damage Thresholds
Cu2CdSnS4 and α/β-Cu2ZnSiS4 meet several criteria for promising nonlinear optical materials for use in the infrared (IR) region. Both are air-stable, crystallize in noncentrosymmetric space groups, and possess high thermal stabilities. Cu2CdSnS4 and α/β-Cu2ZnSiS4 display wide ranges of optical transparency, 1.4–25 and 0.7–25 μm, respectively, and have relatively large second-order nonlinearity as well as phase matchability for wide regions in the IR. The laser-damage threshold (LDT) for Cu2CdSnS4 is 0.2 GW/cm2, whereas α/β-Cu2ZnSiS4 has a LDT of 2.0 GW/cm2 for picosecond near-IR excitation. Both compounds also exhibit efficient third-order nonlinearity. Electronic structure calculations provide insight into the variation in properties.
Rosmus, Kimberly A.; Brant, Jacilynn A.; Wisneski, Stephen D.; Clark, Daniel J.; Kim, Yong Soo; Jang, Joon I.; Brunetta, Carl D.; Zhang, Jian-Han; Srnec, Matthew N.; and Aitken, Jennifer A., "Optical Nonlinearity in Cu2CdSnS4 and α/β-Cu2ZnSiS4: Diamond-like Semiconductors with High Laser-Damage Thresholds" (2014). Chemistry and Physics Faculty Articles. 167.